PART |
Description |
Maker |
MH2M365CXJ-7 MH2M365CNXJ-5 MH2M365CNXJ-6 MH2M365CN |
HYPER PAGE MODE 75497472-BIT ( 2097152-WORD BY 36-BIT ) DYNAMIC RAM From old datasheet system
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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MH16S64PHB-6 B99031 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM From old datasheet system 1073741824-BIT ( 16777216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M27C202FP-12 M5M27C202FP-15 M5M27C202J-12 M5M27C |
MB 41C 27#20 14#16 SKT RECP 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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M5M27C202JK-12I M5M27C202JK-15I M5M27C202K-12I M5M |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152位(131072字由16位)的CMOS电可擦除只读光盘可重复编
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
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MC-454AC726 |
4M-Word By 72-BIT Dynamic RAM Module(4M×72位动态RAM模块) 分词72位动态内存模块(4米72位动态内存模块) 4M-Word By 72-BIT Dynamic RAM Module(4M?72浣????AM妯″?)
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NEC Corp. NEC, Corp.
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THM322020S-10 THM322020S-80 THM322020SG-10 THM3220 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 2097152 WORDS x 32 BIT DYNAMIC RAM MODULE 2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE 2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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MK31VT464-10YE |
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??4浣??姝ュ???AM妯″?) 4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M字64位同步动态RAM模块) 4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M字4位同步动态RAM模块) From old datasheet system
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OKI SEMICONDUCTOR CO., LTD.
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MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM) 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
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OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
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M5M467805BJ M5M467805BTP-5 M5M465165BJ M5M465165BT |
From old datasheet system EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M467400BJ M5M467400BJ-5 M5M467400BJ-5S M5M467400 |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM FAST PAGE MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM From old datasheet system
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Mitsubishi Electric Semiconductor
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